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IPD068N10N3G |
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| Part Number | IPD068N10N3G |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies |
| Description | IPD068N10N3 G OptiMOS®3 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 1... |
| Features |
• N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max ID • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPD068N10N3 G 100 V 6.8 mW 90 A Package Marking PG-TO252-3 068N10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current I D T C=25 °C2) T C=1... |
| Document |
 IPD068N10N3G Data Sheet
PDF 483.00KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IPD068N10N3 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IPD068N10N3 |
Infineon |
Power-Transistor |
|
| 3 | IPD068P03L3 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IPD068P03L3 |
Infineon |
Power-Transistor |
|
| 5 | IPD068P03L3G |
Infineon Technologies |
Power-Transistor |
|