Infineon Technologies AG CFY fiche technique

No.	Partie #	Fabricant	Description
1	CFY27	Infineon Technologies AG	HiRel Ku-Band GaAs General Purpose MESFET r 99 CFY27 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input Power, C- and X-Band 1) Junction temperature Storage temperature range Total power diss
2	CFY66-08P	Infineon Technologies AG	HiRel K-Band GaAs Super Low Noise HEMT der instructions for ordering example) Semiconductor Group 1 of 8 Draft D, September 99 CFY66 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input P
3	CFY67-06	Infineon Technologies AG	HiRel K-Band GaAs Super Low Noise HEMT dering example) Semiconductor Group 1 of 10 Draft D, September 99 CFY67 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input Power, C- and X-Band 1)
4	CFY67-08P	Infineon Technologies AG	HiRel K-Band GaAs Super Low Noise HEMT dering example) Semiconductor Group 1 of 10 Draft D, September 99 CFY67 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input Power, C- and X-Band 1)
5	CFY27-38	Infineon Technologies AG	HiRel Ku-Band GaAs General Purpose MESFET r 99 CFY27 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input Power, C- and X-Band 1) Junction temperature Storage temperature range Total power diss
6	CFY27-P	Infineon Technologies AG	HiRel Ku-Band GaAs General Purpose MESFET r 99 CFY27 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input Power, C- and X-Band 1) Junction temperature Storage temperature range Total power diss
7	CFY66	Infineon Technologies AG	HiRel K-Band GaAs Super Low Noise HEMT der instructions for ordering example) Semiconductor Group 1 of 8 Draft D, September 99 CFY66 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input P
8	CFY66-08	Infineon Technologies AG	HiRel K-Band GaAs Super Low Noise HEMT der instructions for ordering example) Semiconductor Group 1 of 8 Draft D, September 99 CFY66 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input P
9	CFY66-10	Infineon Technologies AG	HiRel K-Band GaAs Super Low Noise HEMT der instructions for ordering example) Semiconductor Group 1 of 8 Draft D, September 99 CFY66 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input P
10	CFY66-10P	Infineon Technologies AG	HiRel K-Band GaAs Super Low Noise HEMT der instructions for ordering example) Semiconductor Group 1 of 8 Draft D, September 99 CFY66 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input P
11	CFY67	Infineon Technologies AG	HiRel K-Band GaAs Super Low Noise HEMT dering example) Semiconductor Group 1 of 10 Draft D, September 99 CFY67 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input Power, C- and X-Band 1)
12	CFY67-08	Infineon Technologies AG	HiRel K-Band GaAs Super Low Noise HEMT dering example) Semiconductor Group 1 of 10 Draft D, September 99 CFY67 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input Power, C- and X-Band 1)
13	CFY67-10	Infineon Technologies AG	HiRel K-Band GaAs Super Low Noise HEMT dering example) Semiconductor Group 1 of 10 Draft D, September 99 CFY67 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input Power, C- and X-Band 1)
14	CFY67-10P	Infineon Technologies AG	HiRel K-Band GaAs Super Low Noise HEMT dering example) Semiconductor Group 1 of 10 Draft D, September 99 CFY67 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input Power, C- and X-Band 1)