CFY66-10P |
Part Number | CFY66-10P |
Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
Description | CFY66 HiRel K-Band GaAs Super Low Noise HEMT • • HiRel Discrete and Microwave Semiconductor Conventional AlGaAs/GaAs HEMT (For new design we recommend to use our pseudo-morphic HEMT CFY67) For profess... |
Features |
der instructions for ordering example)
Semiconductor Group
1 of 8
Draft D, September 99
CFY66
Maximum Ratings
Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input Power, C- and X-Band 1) Junction temperature Storage temperature range Total power dissipation
2)
Symbol VDS VDG VGS ID IG PRF,in TJ Tstg Ptot Tsol
Values 3.5 4.5 - 3... + 0.5 60 2 + 10 150 - 65... + 150 200 230
Unit V V V mA mA dBm °C °C mW °C
Soldering temperature 3) Thermal Resistance Junction-soldering point Notes.:
Rth JS
≤ 515 (tbc.)
K/... |
Document |
CFY66-10P Data Sheet
PDF 551.83KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | CFY66-10 |
Infineon Technologies AG |
HiRel K-Band GaAs Super Low Noise HEMT | |
2 | CFY66-08 |
Infineon Technologies AG |
HiRel K-Band GaAs Super Low Noise HEMT | |
3 | CFY66-08P |
Infineon Technologies AG |
HiRel K-Band GaAs Super Low Noise HEMT | |
4 | CFY66 |
Infineon Technologies AG |
HiRel K-Band GaAs Super Low Noise HEMT | |
5 | CFY67 |
Infineon Technologies AG |
HiRel K-Band GaAs Super Low Noise HEMT |