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CFY27 |
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| Part Number | CFY27 |
| Manufacturer | Infineon (https://www.infineon.com/) Technologies AG |
| Description | CFY27 HiRel Ku-Band GaAs General Purpose MESFET • • • • • • • HiRel Discrete and Microwave Semiconductor For professional pre- and driver-amplifiers For frequencies from 500 MHz to 20 GHz Hermetically... |
| Features |
r 99
CFY27
Maximum Ratings
Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input Power, C- and X-Band 1) Junction temperature Storage temperature range Total power dissipation 2) Soldering temperature 3) Thermal Resistance Junction-soldering point Notes.:
Symbol VDS VDG VGS ID IG PRF,in TJ Tstg Ptot Tsol
Values 9 11 - 6... + 0.5 420 5 + 20 (tbc.) 175 - 65... + 175 900 230
Unit V V V mA mA dBm °C °C mW °C
Rth JS
≤ 150 (tbc.)
K/W
1) For VDS ≤ 5 V. For VDS > 5 V, derating is required. 2) At TS = + 40 °C. For ... |
| Document |
 CFY27 Data Sheet
PDF 572.71KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | CFY25 |
Siemens Semiconductor Group |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
|
| 2 | CFY25 |
Infineon |
HiRel X-Band GaAs MOSFET |
|
| 3 | CFY25-17 |
Siemens Semiconductor Group |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
|
| 4 | CFY25-20 |
Siemens Semiconductor Group |
GaAs FET (Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization) |
|
| 5 | CFY25-20 |
Infineon |
HiRel X-Band GaAs MOSFET |
|