| No. | Partie # | Fabricant | Description | Fiche Technique |
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Infineon Technologies |
SPI70N10L SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2 N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated 100 16 70 P-TO220-3-1 V m A Type SPP70N10L SPB70N10L SP |
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Infineon Technologies |
Power-Transistor • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 Product Summary V DS |
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Infineon Technologies |
Power-Transistor • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPB70N04S4-06 IPI70N04S4-06, IPP70N04S4-06 Product Summary V DS R DS(on),max (SMD v |
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Infineon Technologies |
SIPMOS Power-Transistor SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2 N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated 100 16 70 P-TO220-3-1 V m A Type SPP70N10L SPB70N10L SP |
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Infineon Technologies |
Power-Transistor • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested IPB70N04S3-07 IPI70N04S3-07, IPP70N04S3-07 Product Summary V DS R D |
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Infineon Technologies |
Power-Transistor • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • 100% Avalanche tested IPD70N04S3-07 Product Summary V DS R DS(on),max ID 40 V 6.0 mΩ 82 |
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Infineon Technologies |
Power-Transistor • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalanche tested IPD70N10S3L-12 Product Summary VDS RDS(on),max I D 100 V 11.5 mW 70 A PG-TO252-3- |
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Infineon Technologies |
Power Transistor • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • RoHS compliant • 100% Avalanche tested IPD70N10S3-12 Product Summary VDS RDS(on),max ID 100 V 11.1 mW 70 A PG-TO252-3-11 |
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Infineon Technologies |
SIPMOS Power-Transistor SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2 N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated 100 16 70 P-TO220-3-1 V A m Type SPP70N10L SPB70N10L S |
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Infineon Technologies |
Power-Transistor • Low gate charge for fast switching applications • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMDversion 60 6.7 80 V mΩ A Type |
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Infineon Technologies |
Power-Transistor • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMD version 60 7 80 V mΩ A |
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Infineon Technologies |
Power-Transistor • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMD version 60 7 80 V mΩ A |
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Infineon Technologies |
SIPMOS Power-Transistor SIPMOS =Power-Transistor Product Summary VDS RDS(on) ID P-TO262-3-1 P-TO263-3-2 N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated 100 16 70 P-TO220-3-1 V m A Type SPP70N10L SPB70N10L SP |
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Infineon Technologies |
Power-Transistor MOSFET |
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Infineon Technologies |
Power-Transistor • N-Channel • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated • Green Package (lead free) P-TO262-3-1 IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16 P-TO263-3-2 Product Summary VDS 100 V RDS(on) 16 mΩ |
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Infineon Technologies |
Power-Transistor • N-Channel • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated • Green Package (lead free) P-TO262-3-1 IPI70N10SL-16 IPP70N10SL-16, IPB70N10SL-16 P-TO263-3-2 Product Summary VDS 100 V RDS(on) 16 mΩ |
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Infineon Technologies |
Power-Transistor • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPB70N10S3L-12 IPI70N10S3L-12, IPP70N10S3L-12 Product Summary V DS |
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Infineon Technologies |
Power-Transistor • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPB70N10S3-12 IPI70N10S3-12, IPP70N10S3-12 Product Summary V DS R D |
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Infineon Technologies |
Power-Transistor • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPB70N10S3-12 IPI70N10S3-12, IPP70N10S3-12 Product Summary V DS R D |
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Infineon Technologies |
Power-Transistor • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green product (RoHS compliant) • 100% Avalanche tested IPB70N10S3-12 IPI70N10S3-12, IPP70N10S3-12 Product Summary V DS R D |
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