| No. | Partie # | Fabricant | Description | Fiche Technique |
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Infineon |
IGW30N100T D K#353 0= 305$2#$% !0' 99 9L Symbol :;< B &E I Value + 8 C C /+ G+G+- 8 8 Unit , , , ) *3 Thermal Resistance Parameter Characteristic (M 2N !3 1 ! 9#92 $' F5$'2#0$ ' 9 N !3 1 ! 9#92 $' F5$'2#0$ 37# $2 Symbol Conditions OP QR OP R Max. Value U |
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Infineon Technologies |
2nd Generation thinQ SiC Schottky Diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHs compl |
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Infineon Technologies AG |
Silicon Temperature Sensors • • • • • • • • Temperature dependent resistor with positive temperature coefficient Temperature range – 50 °C to + 150 °C ( – 60 F to 300 F) Available in SMD or leaded or customized packages Linear output Excellent longterm stability Polarity indepen |
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Infineon Technologies |
(MTTxxA Series) Circuit Configurations Available |
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Infineon Technologies |
IGBT • 1.1V Forward voltage of antiparallel rectifier diode • Specified for TJmax = 175°C • TrenchStop® and Fieldstop technology for 1000 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - easy pa |
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Infineon Technologies |
Silicon Carbide Schottky Diode =25°C, tp=10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25°C Operating and storage temperature i dt A²s V W °C VRRM VRSM Ptot Tj , Tstg -55... +175 Page 1 2001-12-04 Preliminary data Thermal Characterist |
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Infineon Technologies |
Silicon Carbide Schottky Diode wer dissipation, TC=25°C Operating and storage temperature A²s V W °C Rev. 2.0 Page 1 2004-03-18 SDT10S60 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal www.DataSheet4U.com resistance, junction - am |
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Infineon |
Phase Control Thyristor , θ = 180°sin, tP = 10 ms ITAVM ITRMS Tvj = 25 °C, tP = 10 ms Tvj = Tvj max, tP = 10 ms Tvj = 25 °C, tP = 10 ms Tvj = Tvj max, tP = 10 ms DIN IEC 60747-6 f = 50 Hz, iGM = 0,8 A, diG/dt = 0,8 A/µs Tvj = Tvj max, vD = 0,67 VDRM 5.Kennbuchstabe / 5th |
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Infineon |
Phase Control Thyristor Tvj max, tP = 10 ms DIN IEC 60747-6 f = 50 Hz, iGM = 1 A, diG/dt = 1 A/µs Kritische Spannungssteilheit critical rate of rise of off-state voltage Tvj = Tvj max, vD = 0,67 VDRM 5.Kennbuchstabe / 5th letter F VDRM,VRRM VDSM VRSM ITRMSM ITAVM ITAVM I |
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Infineon |
Phase Control Thyristor Volle Sperrfähigkeit 50/60Hz über einen weiten Temperaturbereich Hermetisch dichtes Keramikgehäuse Hohe Stoßstrombelastbarkeit Hohe Einschalt di/dt Fähigkeit Full blocking 50/60Hz over a wide range temperature range Hermeticaly sealed c |
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Infineon |
Phase Control Thyristor Volle Sperrfähigkeit 50/60Hz über einen weiten Temperaturbereich Hohe DC Sperrstabilität Hohe Stoßstrombelastbarkeit Hoher Gehäusebruchstrom Hohe Einschalt di/dt Fähigkeit Full blocking 50/60Hz over a wide range temperature range High |
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Infineon |
Phase Control Thyristor Pressure contact technology for high reliability Industrial standard package Electrically insulated base plate Typische Anwendungen Sanftanlasser Gleichrichter für Antriebsapplikationen Kurzschließer-Applikationen Leistungssteller Gl |
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