SDT10S30 |
Part Number | SDT10S30 |
Manufacturer | Infineon (https://www.infineon.com/) Technologies |
Description | and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your neare... |
Features |
=25°C, tp=10ms Repetitive peak reverse voltage Surge peak reverse voltage Power dissipation, TC=25°C Operating and storage temperature
i dt
A²s V W °C
VRRM VRSM Ptot Tj , Tstg
-55... +175
Page 1
2001-12-04
Preliminary data Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case SMD version, www.DataSheet4U.com device on PCB:
P-TO263-3-2: @ min. footprint P-TO263-3-2: @ 6 cm2 cooling area 1)
SDP10S30, SDB10S30 SDT10S30
Values min. typ. 35 max. 2.3 62 K/W Unit
Symbol
RthJC RthJA
-
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Par... |
Document |
SDT10S30 Data Sheet
PDF 340.32KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SDT10S60 |
Infineon Technologies |
Silicon Carbide Schottky Diode | |
2 | SDT100 |
Sirectifier Semiconductors |
Thyristor-Diode Modules | |
3 | SDT100 |
HY |
THREE PHASE RECTIFIER BRIDGE | |
4 | SDT100-08 |
HY |
THREE PHASE RECTIFIER BRIDGE | |
5 | SDT100-12 |
HY |
THREE PHASE RECTIFIER BRIDGE |