SDT10S60 |
Part Number | SDT10S60 |
Manufacturer | Infineon (https://www.infineon.com/) Technologies |
Description | and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your neare... |
Features |
wer dissipation, TC=25°C Operating and storage temperature
A²s V W °C
Rev. 2.0
Page 1
2004-03-18
SDT10S60
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal www.DataSheet4U.com resistance, junction - ambient, leaded RthJC RthJA 2 62 K/W Symbol min. Values typ. max. Unit
Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Diode forward voltage
IF=10A, Tj=25°C IF=10A, Tj=150°C
Symbol min. VF IR -
Values typ. max.
Unit
V 1.5 1.7 34 85 1.7 2.1 µA 350 1500
Reverse current
V R=600V, T j=25°C V R... |
Document |
SDT10S60 Data Sheet
PDF 243.12KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | SDT10S30 |
Infineon Technologies |
Silicon Carbide Schottky Diode | |
2 | SDT100 |
Sirectifier Semiconductors |
Thyristor-Diode Modules | |
3 | SDT100 |
HY |
THREE PHASE RECTIFIER BRIDGE | |
4 | SDT100-08 |
HY |
THREE PHASE RECTIFIER BRIDGE | |
5 | SDT100-12 |
HY |
THREE PHASE RECTIFIER BRIDGE |