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Infineon Technologies AG |
ABM 3G ATM Buf fer Manager and characteristics of the product or to discontinue this product without notice. None of the information contained in this document constitutes an express or implied assurance of availability or functionality. Please contact Infineon for the latest |
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Infineon Technologies AG |
ABM Premium ATM Buf fer Manager and characteristics of the product or to discontinue this product without notice. None of the information contained in this document constitutes an express or implied assurance of availability or functionality. Please contact Infineon for the latest |
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Infineon |
Thermally-Enhanced High Power RF LDMOS FET include input and output matching, high gain and a thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXFC211507SC Package |
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Infineon |
Thermally-Enhanced High Power RF LDMOS FET include input and output matching, high gain and a thermally-enhanced plastic package. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Efficiency (%) Two-ca |
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Infineon |
Thermally-Enhanced High Power RF LDMOS FET include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXFC192207SH Package |
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Infineon |
Thermally-Enhanced High Power RF LDMOS FET include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Efficiency |
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Infineon |
Thermally-Enhanced High Power RF LDMOS FET include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Efficiency |
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Infineon |
Thermally-Enhanced High Power RF LDMOS FET include input and output matching, high gain and a thermally-enhanced package with earless flange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. PXFC193808SV Package |
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Infineon |
Thermally-Enhanced High Power RF LDMOS FET include input and output matching, high gain and thermally-enhanced package with earless flanges. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal performance and superior reliability. Gain (dB) Drain Effic |
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