Infineon IRL fiche technique

No.	Partie #	Fabricant	Description
1	IRL40SC228	Infineon	Power MOSFET (A) 5 ID = 100A 4 3 2 TJ = 125°C 1 0 TJ = 25°C 0 4 8 12 16 20 VGS, Gate-to-Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 600 LIMITED BY PACKAGE 500 400 300 200 100 0 25 50 75 100 125 150 175 TC, Case Tempera
2	AUIRLR024N	Infineon	Power MOSFET  Advanced Planar Technology  Low On-Resistance  Logic-Level Gate Drive  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotiv
3	IRL100HS121	Infineon	MOSFET urrent (A) Figure 1 Typical On-Resistance vs. Gate Voltage Figure 2 Typical On-Resistance vs. Drain Current Final Datasheet www.infineon.com Please read the important Notice and Warnings at the end of this document V2.2 2019-12-13 IRL100HS121 Ta
4	IRL3705NPbF	Infineon	Power MOSFET rm Quantity Tube 50 Orderable Part Number IRL3705NPbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Pulsed Drain Current 
5	IRL3803PBF	Infineon	MOSFET Pack Form Quantity Tube 50 Orderable Part Number IRL3803PbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Continuous Drain Current, VGS @ 10V ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V Pulsed Drain Cu
6	IRLML0060TRPbF	Infineon	Power MOSFET Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1 Benefits  Multi-Vendor Compatibility results in Easier Manufacturing  Environmentally Friendlier Increase
7	IRLH7134PbF	Infineon	Power MOSFET Low RDS(ON) (< 4.7m@ VGS = 4.5V) Low Thermal Resistance to PCB (<1.2°C/W) Low Profile (<0.9mm) Industry-Standard Pinout Compatible with Existing Surface Mount Techniques RoHS Compliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial
8	AUIRLL024N	Infineon	Power MOSFET  Advanced Planar Technology  Low On-Resistance  Logic Level Gate Drive  Dynamic dv/dt Rating  150°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotiv
9	AUIRLL024Z	Infineon	Power MOSFET  Advanced Process Technology  Ultra Low On-Resistance  Logic Level Gate Drive  150°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifical
10	AUIRLS3036-7P	Infineon	Power MOSFET  Advanced Process Technology  Ultra Low On-Resistance  Logic Level Gate Drive  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *
11	AUIRL1404ZS	Infineon	Power MOSFET  Logic Level  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically designed
12	IRL40SC209	Infineon	Power MOSFET
13	IRLI530NPbF	Infineon	Power MOSFET e Fullpak is mounted to a heatsink using a single clip or by a single screw fixing. G Gate S D G TO-220 Full-Pak D Drain S Source Base Part Number IRLI530NPbF Package Type TO-220 Full-Pak Standard Pack Form Quantity Tube 50 Orderable Part
14	IRLB4132	Infineon	Power MOSFET  Maximum Power Dissipation  Maximum Power Dissipation  Linear Derating Factor Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting Torque, 6-32 or M3 Screw Thermal Resistance S
15	IRL7472L1TRPbF	Infineon	Power MOSFET ) ID, Drain Current (A) 1.6 ID = 195A 1.4 1.2 1.0 0.8 TJ = 125°C 0.6 0.4 0.2 TJ = 25°C 0.0 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 700 600 Limited by package 500 400
16	IRLB8314PbF	Infineon	Power MOSFET
17	AUIRLL2705	Infineon	Power MOSFET  Advanced Planar Technology  Low On-Resistance  Logic Level Gate Drive  Dynamic dv/dt Rating  150°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotiv
18	AUIRLR014N	Infineon	Power MOSFET  Advanced Planar Technology  Logic Level Gate Drive  Low On-Resistance  Dynamic dV/dT Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotiv
19	AUIRLU024N	Infineon	Power MOSFET  Advanced Planar Technology  Low On-Resistance  Logic-Level Gate Drive  Dynamic dv/dt Rating  175°C Operating Temperature  Fast Switching  Fully Avalanche Rated  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotiv
20	AUIRLR024Z	Infineon	Power MOSFET  Logic Level  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified * Description Specifically designed