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AUIRLS3036-7P |
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| Part Number | AUIRLS3036-7P |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of t... |
| Features |
Advanced Process Technology Ultra Low On-Resistance Logic Level Gate Drive Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features com... |
| Document |
 AUIRLS3036-7P Data Sheet
PDF 672.44KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | AUIRLS3036-7P |
International Rectifier |
Power MOSFET |
|
| 2 | AUIRLS3036 |
International Rectifier |
Power MOSFET |
|
| 3 | AUIRLS3034 |
International Rectifier |
Power MOSFET |
|
| 4 | AUIRLS3034-7P |
Infineon |
Power MOSFET |
|
| 5 | AUIRLS3034-7P |
International Rectifier |
Power MOSFET |
|