Infineon IDK fiche technique

No.	Partie #	Fabricant	Description
1	IDK05G120C5	Infineon	1200V Schottky Diode  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / no forward recovery  Temperature independent switching behaviour  Low forward voltage even at high operating temperature  Tight forward voltage distributi
2	IDK04G65C5	Infineon	Silicon Carbide Diode  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant 
3	IDK06G65C5	Infineon	Silicon Carbide Diode  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant 
4	IDK03G65C5	Infineon	Silicon Carbide Diode  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant 
5	IDK12G65C5	Infineon	Silicon Carbide Diode  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant 
6	IDK02G120C5	Infineon	1200V Schottky Diode  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / no forward recovery  Temperature independent switching behaviour  Low forward voltage even at high operating temperature  Tight forward voltage distributi
7	IDK08G120C5	Infineon	1200V Schottky Diode  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / no forward recovery  Temperature independent switching behaviour  Low forward voltage even at high operating temperature  Tight forward voltage distributi
8	IDK10G65C5	Infineon	Silicon Carbide Diode  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant 
9	IDK08G65C5	Infineon	Silicon Carbide Diode  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant 
10	IDK05G65C5	Infineon	Silicon Carbide Diode  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant 
11	IDK02G65C5	Infineon	Silicon Carbide Diode  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant 
12	IDK09G65C5	Infineon	Silicon Carbide Diode  Revolutionary semiconductor material - Silicon Carbide  Benchmark switching behavior  No reverse recovery/ No forward recovery  Temperature independent switching behavior  High surge current capability  Pb-free lead plating; RoHS compliant 
13	IDK10G120C5	Infineon	Schottky Diode  Revolutionary semiconductor material - Silicon Carbide  No reverse recovery current / no forward recovery  Temperature independent switching behaviour  Low forward voltage even at high operating temperature  Tight forward voltage distributi