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IDK08G65C5 |
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| Part Number | IDK08G65C5 |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined... |
| Features |
Revolutionary semiconductor material - Silicon Carbide Benchmark switching behavior No reverse recovery/ No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applications Breakdown voltage tested at 18 mA2) Optimized for high temperature operation Benefits System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Enabling higher frequency / increased power density solutions Higher system reliability... |
| Document |
 IDK08G65C5 Data Sheet
PDF 580.02KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IDK08G120C5 |
Infineon |
1200V Schottky Diode |
|
| 2 | IDK02G120C5 |
Infineon |
1200V Schottky Diode |
|
| 3 | IDK02G65C5 |
Infineon |
Silicon Carbide Diode |
|
| 4 | IDK03G65C5 |
Infineon |
Silicon Carbide Diode |
|
| 5 | IDK04G65C5 |
Infineon |
Silicon Carbide Diode |
|