IDK10G65C5 |
Part Number | IDK10G65C5 |
Manufacturer | Infineon (https://www.infineon.com/) |
Description | ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. The Infineon proprietary diffusion soldering process, already introduced with G3 is now combined ... |
Features |
Revolutionary semiconductor material - Silicon Carbide Benchmark switching behavior No reverse recovery/ No forward recovery Temperature independent switching behavior High surge current capability Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target applications Breakdown voltage tested at 22 mA2) Optimized for high temperature operation Benefits System efficiency improvement over Si diodes System cost / size savings due to reduced cooling requirements Enabling higher frequency / increased power density solutions Higher system reliability... |
Document |
IDK10G65C5 Data Sheet
PDF 538.73KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IDK10G120C5 |
Infineon |
Schottky Diode | |
2 | IDK12G65C5 |
Infineon |
Silicon Carbide Diode | |
3 | IDK02G120C5 |
Infineon |
1200V Schottky Diode | |
4 | IDK02G65C5 |
Infineon |
Silicon Carbide Diode | |
5 | IDK03G65C5 |
Infineon |
Silicon Carbide Diode |