No. | Partie # | Fabricant | Description | Fiche Technique |
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Infineon |
Schottky diode • VRRM = 2000 V • IF = 10 A • VF = 1.5 V • No reverse recovery current / no forward recovery • High surge current capability • Temperature independent switching behavior • Low forward voltage even at high operating temperature • Tight forward voltage |
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Infineon |
Schottky diode • VRRM = 2000 V • IF = 40 A • VF = 1.5 V • No reverse recovery current / no forward recovery • High surge current capability • Temperature independent switching behavior • Low forward voltage even at high operating temperature • Tight forward voltage |
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Infineon |
High Speed IGBT Maximum Power Dissipation PD @TC = 25°C Linear Derating Factor Gate-to-Source Voltage VGS Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 |
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Infineon |
Power Transistor • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPG20N06S2L-65 Product Summary VDS RDS(on),max3) ID 55 V 65 |
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Infineon |
Schottky diode • VRRM = 2000 V • IF = 50 A • VF = 1.5 V • No reverse recovery current / no forward recovery • High surge current capability • Temperature independent switching behavior • Low forward voltage even at high operating temperature • Tight forward voltage |
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Infineon |
Power-Transistor • Dual N-channel Normal Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) Product Sum |
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Infineon |
IGBT TRENCHSTOPTMtechnologyoffering •verylowturn-offenergy •lowVCEsat •lowEMI •maximumjunctiontemperature175°C •qualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating,halogen-freemouldcompound,RoHS compliant •comp |
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Infineon |
Power-Transistor • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) IPG20N06S4L- |
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Infineon |
Power-Transistor • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) IPG20N06S2L- |
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Infineon Technologies |
XPAK 850 nm Module 10 Gigabit Pluggable Transceiver Compatible with XPAK MSA Rev. 2.3 Standards • Compatible with IEEE Std 802.3ae™-2002 • Compatible with Fibre Channel 10GFC Draft 3.5 • Compatible with XPAK MSA Rev. 2.3 Optical V23833-G2005-A101 V23833-G6005-A101 V23833-G6005-A111 File: 2101 • IEEE Ethernet: Serial 850 nm 10GBASE- |
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Infineon Technologies |
Alphanumeric Intelligent Display DEVICES • Very Close Multi-line Spacing, 0.4" Centers • 0.180" 5 x 7 Dot Matrix Characters • 128 Special ASCII Characters for English, German, Italian, Swedish, Danish, and Norwegian Languages • Wide Viewing Angle: X axis 50° Maximum, Y Axis ±75° Maximum • F |
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Infineon |
Power Transistor • Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type IPG20N04S4-12 Package PG-TDSON-8-4 Markin |
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Infineon |
Power Transistor • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested PG-TDSON-8-4 Type IPG20N06S3L-23 Package PG-TDSON-8-4 Markin |
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Infineon |
Power-Transistor • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) IPG20N06S4L- |
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Infineon |
Power-Transistor • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested IPG20N10S4L-35 Product Summary V DS R 4) DS(on),max ID 1 |
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Infineon |
Power-Transistor • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) IPG20N06S2L- |
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Infineon |
Power-Transistor • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested • Feasible for automatic optical inspection (AOI) IPG20N06S2L- |
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Infineon |
Power Transistor • Dual N-channel Normal Level - Enhancement mode PG-TDSON-8-4 • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested Type IPG20N04S4-09 Package PG-TDSON-8-4 Markin |
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Infineon |
Power Transistor • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested PG-TDSON-8-4 Type IPG20N06S2L-50 Package PG-TDSON-8-4 Markin |
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Infineon |
Power Transistor • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested PG-TDSON-8-4 Type IPG20N06S3L-35 Package PG-TDSON-8-4 Markin |
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