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G20N60HS |
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| Part Number | G20N60HS |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | IRFP3006PbF 60V 2.1m 2.5m 270A 195A G VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) D D G S S TO-247AC Applications High Efficiency Synchronous Rectification in S... |
| Features |
Maximum Power Dissipation PD @TC = 25°C Linear Derating Factor Gate-to-Source Voltage VGS Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy IAR Avalanche Current EAR Repetitive Avalanche Energy Thermal Resistance Symbol Parameter Junction-to-Case RJC Case-to-Sink, Flat Greased Surface RCS Junction-to-Ambient RJA TJ TSTG 1 www.irf.com © 2013 International Rectifier
-55 to + 175
10lbf in (... |
| Document |
 G20N60HS Data Sheet
PDF 406.41KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | G20N60B3 |
Intersil Corporation |
N-Channel IGBT |
|
| 2 | G20N60B3D |
Fairchild |
40A / 600V / UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode |
|
| 3 | G20N60C3 |
Fairchild Semiconductor |
N-Channel IGBT |
|
| 4 | G20N60C3D |
Intersil Corporation |
N-Channel IGBT |
|
| 5 | G20N100D2 |
Intersil Corporation |
HGTG20N100D2 |
|