IPG20N06S3L-35 |
Part Number | IPG20N06S3L-35 |
Manufacturer | Infineon (https://www.infineon.com/) |
Description | IPG20N06S3L-35 OptiMOS®-T Power-Transistor Product Summary V DS R DS(on),max5) ID 55 35 20 V mΩ A Features • Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C pe... |
Features |
• Dual N-channel Logic Level - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100% Avalanche tested PG-TDSON-8-4 Type IPG20N06S3L-35 Package PG-TDSON-8-4 Marking 3N06L35 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current one channel active Symbol ID Conditions T C=25 °C, V GS=10 V1) T C=100 °C, V GS=10 V2) Pulsed drain current2) one channel active Avalanche energy, single pulse2, 5) Avalanche current, single pulse5) Gate source voltage4) Power dissipation one cha... |
Document |
IPG20N06S3L-35 Data Sheet
PDF 159.23KB |
Distributor | Stock | Price | Buy |
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No. | Parte # | Fabricante | Descripción | Hoja de Datos |
---|---|---|---|---|
1 | IPG20N06S3L-23 |
Infineon |
Power Transistor | |
2 | IPG20N06S2L-35 |
Infineon |
Power Transistor | |
3 | IPG20N06S2L-35A |
Infineon |
Power-Transistor | |
4 | IPG20N06S2L-50 |
Infineon |
Power Transistor | |
5 | IPG20N06S2L-50A |
Infineon |
Power-Transistor |