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Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor e definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2014-04-07 BFP193 Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. DC Characteris |
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Infineon Technologies |
XFP1310 nm Small Form Factor Module 10 Gigabit Pluggable Transceiver Compatible with XFP MSA Rev. 3.1 Standards • • • • • Compatible with IEEE 802.3ae™-2002 Compatible with Fibre Channel 10GFC Draft 3.5 Compatible with ITU-T G.693 11/2001 Compatible with XFP MSA Rev. 3.1 Compatible with Telcordia GR-253-CORE V23833-Fx105-B001 V23833-Fx105-B002 File |
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Infineon |
MOSFET Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Description IR MOSFET™ technology from Infineon utilizes advanced processing techniques to achieve extremely low o |
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Infineon |
IGBT = 15 V IC = 100 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 1,60 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj |
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Infineon |
IGBT • LowVCEsat • Tvjop=150°C • VCEsatwithpositivetemperaturecoefficient MechanicalFeatures • Highpowerdensity • IntegratedNTCtemperaturesensor • Copperbaseplate • PressFITcontacttechnology • Standardhousing ModuleLabelCode Barcode |
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Infineon |
IGBT • Increasedblockingvoltagecapabilityto650V • High Short Circuit Capability, Self Limiting Short CircuitCurrent • TrenchIGBT4 • Tvjop=150°C • VCEsatwithpositiveTemperatureCoefficient MechanicalFeatures • IntegratedNTCtemperaturesen |
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Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor eter Symbol Value Unit Junction - soldering point2) RthJS 105 K/W 1TS is measured on the collector lead at the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) 1 2 |
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Infineon |
IGBT-Module • LowSwitchingLosses • Tvjop=150°C • VCEsatwithpositiveTemperatureCoefficient • LowVCEsat MechanicalFeatures • HighPowerandThermalCyclingCapa |
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Infineon Technologies |
XFP1310 nm Small Form Factor Module 10 Gigabit Pluggable Transceiver Compatible with XFP MSA Rev. 3.1 Standards • • • • • Compatible with IEEE 802.3ae™-2002 Compatible with Fibre Channel 10GFC Draft 3.5 Compatible with ITU-T G.693 11/2001 Compatible with XFP MSA Rev. 3.1 Compatible with Telcordia GR-253-CORE V23833-Fx105-B001 V23833-Fx105-B002 File |
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Infineon Technologies |
XFP1310 nm Small Form Factor Module 10 Gigabit Pluggable Transceiver Compatible with XFP MSA Rev. 3.1 Standards • • • • • Compatible with IEEE 802.3ae™-2002 Compatible with Fibre Channel 10GFC Draft 3.5 Compatible with ITU-T G.693 11/2001 Compatible with XFP MSA Rev. 3.1 Compatible with Telcordia GR-253-CORE V23833-Fx105-B001 V23833-Fx105-B002 File |
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Infineon Technologies |
IGBT-Module ; # # # : # # # !" " : # ! !" " " # T# # " U # " U U V W U U V W W W ; B B " B # # # # # 2, ' 2, ' 2, ' + + + + K* M Q Q " 2, ' E1F " 1 +,- ' +>-1 $%& ' ()* +>- ' (+ ? (+ H1I $%& ' ()* ' ' NO 1 $%& ' ()*1 +,- ' ( +1 +>- ' NO 1 $%& ' ()*1 +,- ' ( |
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Infineon |
IGBT • Increasedblockingvoltagecapabilityto650V • High Short Circuit Capability, Self Limiting Short CircuitCurrent • TrenchIGBT4 • Tvjop=150°C • VCEsatwithpositiveTemperatureCoefficient MechanicalFeatures • IntegratedNTCtemperaturesen |
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Infineon |
IGBT • Increasedblockingvoltagecapabilityto650V • High Short Circuit Capability, Self Limiting Short CircuitCurrent • TrenchIGBT4 • Tvjop=150°C • VCEsatwithpositiveTemperatureCoefficient MechanicalFeatures • IntegratedNTCtemperaturesen |
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Infineon |
IGBT • LowVCEsat • Tvjop=150°C • VCEsatwithpositivetemperaturecoefficient MechanicalFeatures • Highpowerdensity • IntegratedNTCtemperaturesensor • Copperbaseplate • PressFITcontacttechnology • Standardhousing • Pre-appliedThermalInte |
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Infineon |
PNP Silicon RF Transistor l Values Unit min. typ. max. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 70 mA, VCE = 8 V V(BR)CEO |
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Infineon Technologies AG |
NPN Silicon RF Transistor Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC |
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Infineon Technologies AG |
NPN Silicon RF Transistor llector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 10 V, VBE = 0 Collector-base cutoff current VCB = 8 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 1 mA, VCE = 5 V hFE 30 100 200 |
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Infineon Technologies AG |
NPN Silicon RF Transistor eakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 5 mA, VCE = 8 V hFE 50 100 200 IEBO 1 µA ICBO 1 |
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Infineon Technologies AG |
NPN Silicon RF Transistor otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = |
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Infineon Technologies AG |
Low Noise Silicon Bipolar RF Transistor |
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