| No. | Partie # | Fabricant | Description | Fiche Technique |
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Infineon Technologies |
SPW47N60C3 11 Please note the new package dimensions arccording to PCN 2009-134-A 63:1& 0D[LPXP5DWLQJV 3DUDPHWHU 'UDLQ6RXUFHYROWDJHVORSH VDS 9,' $Tj & 7KHUPDO&KDUDFWHULVWLFV 3DUDPHWHU 7KHUPDOUHVLVWDQFHMXQFWLRQFDVH 7KHUP |
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Infineon |
SPW35N60C3 • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv /dt rated • Ultra low effective capacitances • Improved transconductance Product Summary V DS @ T j,max R DS(on),max ID SPW35N60C3 650 V 0.1 |
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Infineon |
Power Transistor QGVWRUDJHWHPSHUDWXUH Reverse diode dv/dt 7) 6\PERO ,' ,'SXOV ($6 EAR ,$5 VGS VGS Ptot 7M7VWJ dv/dt 9DOXH 633B, 63$ ± ± 15 8QLW $ $ P- |
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Infineon Technologies |
MOSFET • Extremely low losses due to very low FOM Rdson*Qg and Eoss • Very high commutation ruggedness • Easy to use/drive • JEDEC1) qualified, Pb-free plating, Halogen free Applications PFC stages, hard switching PWM stages and resonant switching PWM stage |
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Infineon |
SPW24N60C3 • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv /dt rated • Ultra low effective capacitances • Improved transconductance Product Summary V DS @ T j,max R DS(on),max ID 650 0.16 24.3 V Ω A |
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Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak current capability • Improved transconductance P-TO220-3-31 1 2 3 VDS @ Tjmax RDS(on) ID PG-TO220-3-31 PG-TO262-3 650 0 |
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Infineon |
SPW47N60CFD |
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Infineon |
Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • Ultra low effective capacitances Product Summary VDS @ Tjmax 650 V RDS(on) 0.38 Ω ID 11 A P-TO220-3-31 P-TO263-3-2 P-TO220-3 |
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Infineon Technologies |
2nd Generation thinQ SiC Schottky Diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHs compl |
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Infineon Technologies |
2nd Generation thinQ SiC Schottky Diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHS compl |
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Infineon Technologies |
2nd Generation thinQ SiC Schottky Diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHS compl |
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Infineon Technologies AG |
2nd Generation thinQ SiC Schottky Diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHS compl |
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Infineon Technologies AG |
2nd Generation thinQ SiC Schottky Diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHs comp |
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Infineon Technologies AG |
2nd Generation thinQ SiC Schottky Diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHS compl |
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Infineon |
Power Transistor • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID • Periodic avalanche rated PG-TO220FP PG-TO262 • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P-TO220-3-31 3 12 • |
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Infineon Technologies AG |
NPN Silicon AF Transistors l Resistance Junction - soldering point 1) RthJS 240 K/W Unit max. V Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Colle |
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Infineon |
MOSFET •Suitableforhardandsoftswitching(PFCandhighperformanceLLC) •IncreasedMOSFETdv/dtruggednessto120V/ns •IncreasedefficiencyduetobestinclassFOMRDS(on)*EossandRDS(on)*Qg •BestinclassRDS(on)/package •Easytouse/drive •Pb |
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Infineon Technologies |
Cool MOS Power Transistor • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme d v/dt rated • High peak current capability • Intrinsic fast-recovery body diode • Extreme low reverse recovery charge VDS @ Tjmax RDS(on) ID 650 |
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Infineon Technologies |
Power Transistor • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID • Periodic avalanche rated PG-TO220FP PG-TO262 • Extreme dv/dt rated • High peak current capability • Improved transconductance 23 1 P-TO220-3-31 • PG-T |
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Infineon Technologies |
2nd Generation thinQ SiC Schottky Diode • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery/ No forward recovery • No temperature influence on the switching behavior • High surge current capability • Pb-free lead plating; RoHs compl |
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