Infineon 2ED fiche technique

No.	Partie #	Fabricant	Description
1	2EDN7534U	Infineon	Dual-channel low-side 5A gate driver Applications • ±5 A source/sink currents • Switch-mode power-supplies • 19 ns typ. propagation delay • DC-DC power converters • +6/-4 ns propagation delay accuracy • Synchronous rectification stages • 1.8 µs output start-up time • 500 ns out
2	2ED21834S06J	Infineon	650V half-bridge gate driver • Unique Infineon Thin-Film-Silicon On Insulator (SOI)-Technology • Negative VS transient immunity of 100 V • Floating channel designed for bootstrap operation • Operating voltages (VS node) upto + 650 V • Maximum bootstrap voltage (VB node) of + 675
3	2EDS9265H	Infineon	MOSFET gate-driver • 4 A / 8 A or 1 A / 2 A source / sink output current • Up to 10 MHz PWM switching frequency • PWM signal propagation delay typ. 37 ns with – 3 ns channel-to-channel mismatch – +7/-6 ns propagation delay variance • Common Mode Transient Immunity CMTI
4	2EDB8259K	Infineon	Dual-channel isolated gate-driver • 2-channel isolated gate driver for Si MOSFETs • Fast input-to-output propagation (38 ns) with excellent stability (+9/-5 ns) • Strong output stage: 5 A/9 A source/ sink • Fast output clamping for VDDA/B < UVLO • Fast UVLO recovery time (< 2 μs) • T
5	2EDN8523R	Infineon	EiceDRIVER MOSFET Fast, precise, strong and compatible • Highly efficient SMPS enabled by 5 ns fast slew rates and 17 ns propagation delay precision for fast MOSFET and GaN switching • 1 ns channel-to-channel propagation delay accuracy enables safe use of two channels
6	2ED020I06-FI	Infineon	Dual IGBT Driver • Floating high side driver • Undervoltage lockout for both channels • 3.3 V and 5 V TTL compatible inputs • CMOS Schmitt-triggered inputs with pull-down • Non-inverting inputs • Interlocking inputs • Dedicated shutdown input with pull-up • RoHS comp
7	2ED020I12-FI	Infineon	Dual IGBT Driver • Floating high side driver • Undervoltage lockout for both channels • 3.3 V and 5 V TTL compatible inputs • CMOS Schmitt-triggered inputs with pull-down • Non-inverting inputs • Interlocking inputs • Dedicated shutdown input with pull-up • RoHS comp
8	2ED2181S06F	Infineon	650V high-side and low-side gate driver  Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology  Negative VS transient immunity of 100 V  Floating channel designed for bootstrap operation  Operating voltages (VS node) upto + 650 V  Maximum bootstrap voltage (VB node) of + 675
9	2ED21814S06J	Infineon	650V high-side and low-side gate driver  Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology  Negative VS transient immunity of 100 V  Floating channel designed for bootstrap operation  Operating voltages (VS node) upto + 650 V  Maximum bootstrap voltage (VB node) of + 675
10	2EDN7533F	Infineon	Dual-channel low-side 5A gate driver Applications • ±5 A source/sink currents • Switch-mode power-supplies • 19 ns typ. propagation delay • DC-DC power converters • +6/-4 ns propagation delay accuracy • Synchronous rectification stages • 1.8 µs output start-up time • Power fact
11	2EDN7533R	Infineon	Dual-channel low-side 5A gate driver Applications • ±5 A source/sink currents • Switch-mode power-supplies • 19 ns typ. propagation delay • DC-DC power converters • +6/-4 ns propagation delay accuracy • Synchronous rectification stages • 1.8 µs output start-up time • Power fact
12	2EDN8533F	Infineon	Dual-channel low-side 5A gate driver Applications • ±5 A source/sink currents • Switch-mode power-supplies • 19 ns typ. propagation delay • DC-DC power converters • +6/-4 ns propagation delay accuracy • Synchronous rectification stages • 1.8 µs output start-up time • Power fact
13	2EDN7534R	Infineon	Dual-channel low-side 5A gate driver Applications • ±5 A source/sink currents • Switch-mode power-supplies • 19 ns typ. propagation delay • DC-DC power converters • +6/-4 ns propagation delay accuracy • Synchronous rectification stages • 1.8 µs output start-up time • Power fact
14	2EDN7524R	Infineon	EiceDRIVER MOSFET Fast, precise, strong and compatible • Highly efficient SMPS enabled by 5 ns fast slew rates and 17 ns propagation delay precision for fast MOSFET and GaN switching • 1 ns channel-to-channel propagation delay accuracy enables safe use of two channels
15	2EDN8523F	Infineon	EiceDRIVER MOSFET Fast, precise, strong and compatible • Highly efficient SMPS enabled by 5 ns fast slew rates and 17 ns propagation delay precision for fast MOSFET and GaN switching • 1 ns channel-to-channel propagation delay accuracy enables safe use of two channels
16	2EDN7524G	Infineon	EiceDRIVER MOSFET Fast, precise, strong and compatible • Highly efficient SMPS enabled by 5 ns fast slew rates and 17 ns propagation delay precision for fast MOSFET and GaN switching • 1 ns channel-to-channel propagation delay accuracy enables safe use of two channels
17	2EDN7523G	Infineon	EiceDRIVER MOSFET Fast, precise, strong and compatible • Highly efficient SMPS enabled by 5 ns fast slew rates and 17 ns propagation delay precision for fast MOSFET and GaN switching • 1 ns channel-to-channel propagation delay accuracy enables safe use of two channels
18	2ED020I12FA	Infineon	Dual IGBT Driver • Dual channel isolated IGBT Driver • For 600V/1200V IGBTs • 2 A rail-to-rail output • Vcesat-detection • Active Miller Clamp Product Highlights • Coreless transformer isolated driver • Basic insulation according to DIN EN 60747-5-2 • Basic insulatio
19	2EDN8524F	Infineon	EiceDRIVER MOSFET Fast, precise, strong and compatible • Highly efficient SMPS enabled by 5 ns fast slew rates and 17 ns propagation delay precision for fast MOSFET and GaN switching • 1 ns channel-to-channel propagation delay accuracy enables safe use of two channels
20	2EDN7524F	Infineon	EiceDRIVER MOSFET Fast, precise, strong and compatible • Highly efficient SMPS enabled by 5 ns fast slew rates and 17 ns propagation delay precision for fast MOSFET and GaN switching • 1 ns channel-to-channel propagation delay accuracy enables safe use of two channels