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2ED21834S06J |
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| Part Number | 2ED21834S06J |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | The 2ED2183(4)S06F(J) is a half-bridge high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineon’s SOI-technology there is ... |
| Features |
• Unique Infineon Thin-Film-Silicon On Insulator (SOI)-Technology • Negative VS transient immunity of 100 V • Floating channel designed for bootstrap operation • Operating voltages (VS node) upto + 650 V • Maximum bootstrap voltage (VB node) of + 675 V • Integrated ultra-fast, low resistance bootstrap diode • Integrated shoot-through protection and built-in dead time • Logic Operational up to –11 V on VS Pin • Negative Voltage Tolerance On Inputs of –5 V • Independent under voltage lockout for both channels • Schmitt trigger inputs with hysteresis • 3.3 V, 5 V and 15 V input logic compatible •... |
| Document |
 2ED21834S06J Data Sheet
PDF 1.17MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2ED2183S06F |
Infineon |
650V half-bridge gate driver |
|
| 2 | 2ED21814S06J |
Infineon |
650V high-side and low-side gate driver |
|
| 3 | 2ED2181S06F |
Infineon |
650V high-side and low-side gate driver |
|
| 4 | 2ED21084S06J |
Infineon |
650V half bridge gate driver |
|
| 5 | 2ED2108S06F |
Infineon |
650V half bridge gate driver |
|