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2ED21814S06J |
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| Part Number | 2ED21814S06J |
| Manufacturer | Infineon (https://www.infineon.com/) |
| Description | The 2ED2181(4)S06F(J) is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent... |
| Features |
Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology Negative VS transient immunity of 100 V Floating channel designed for bootstrap operation Operating voltages (VS node) upto + 650 V Maximum bootstrap voltage (VB node) of + 675 V Integrated ultra-fast, low resistance bootstrap diode Logic operational up to –11 V on VS Pin Negative voltage tolerance on inputs of –5 V Independent under voltage lockout for both channels Schmitt trigger inputs with hysteresis 3.3 V, 5 V and 15 V input logic compatible Maximum supply voltage of 25 V Dual package options of DSO... |
| Document |
 2ED21814S06J Data Sheet
PDF 1.22MB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | 2ED2181S06F |
Infineon |
650V high-side and low-side gate driver |
|
| 2 | 2ED21834S06J |
Infineon |
650V half-bridge gate driver |
|
| 3 | 2ED2183S06F |
Infineon |
650V half-bridge gate driver |
|
| 4 | 2ED21084S06J |
Infineon |
650V half bridge gate driver |
|
| 5 | 2ED2108S06F |
Infineon |
650V half bridge gate driver |
|