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Inchange Semiconductor |
Silicon NPN Power Transistors ified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 5V ICBO Collector Cutoff Current VC |
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Inchange Semiconductor |
Silicon NPN Power Transistors SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 0.5A; IB= 50mA VBE(on) Base-Emitter On Voltage IC= 0.5A; VCE= 5V ICBO Collector Cutoff Current VCB= |
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Inchange Semiconductor |
Silicon NPN Power Transistors ollector-Emitter Breakdown Voltage IC= 50mA; IB= 0 V(BR)EBO Emitter –Base Breakdown Voltage IE= 1mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(on) Base-Emitter On Voltage IC= 3A; VCE= 5V ICBO Collector Cutoff Cur |
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Inchange Semiconductor |
Silicon NPN Power Transistors 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5.0A; IB= 0.5A VBE(on) Base-Emitter On Voltage IC= 5A ; VCE= 5V ICBO Collector Cutoff Current VCB= 120V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 hFE DC Current Gain |
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Inchange Semiconductor |
Silicon NPN Power Transistors |
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Inchange Semiconductor |
Silicon NPN Power Transistors or-Emitter Breakdown Voltage IC= 50mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 0.4A VBE(on) Base-Emitter On Voltage IC= 1A; VCE= 5V ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 5V; I |
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Inchange Semiconductor |
Silicon NPN Power Transistors |
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Inchange Semiconductor |
Silicon NPN Power Transistors mitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 0.5A ; VCE= 5V ICBO Collector Cutoff Current VCB= 60V ; IE=0 IEBO Emitter Cutoff Current VEB= 7V ; IC=0 hFE DC Current Gain IC= 0.5A ; VCE= 5V hFE Classifica |
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Inchange Semiconductor |
Silicon NPN Power Transistors specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 6mA ICBO Collector Cutoff C |
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Inchange Semiconductor |
Silicon NPN Power Transistors TER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6.0A; IB= 0.6A VBE(on) Base-Emitter On Voltage IC= 5A ; VCE= 5V ICBO Collector Cutoff Current VCB= 120V ; IE= 0 I |
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