KTD1945 Inchange Semiconductor Silicon NPN Power Transistors Datasheet, en stock, prix

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KTD1945

Inchange Semiconductor
KTD1945
KTD1945 KTD1945
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Part Number KTD1945
Manufacturer Inchange Semiconductor
Description ·Low Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC= 2A ·High Collector Power Dissipation- : PC= 25W(Max) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO...
Features mitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 0.5A ; VCE= 5V ICBO Collector Cutoff Current VCB= 60V ; IE=0 IEBO Emitter Cutoff Current VEB= 7V ; IC=0 hFE DC Current Gain IC= 0.5A ; VCE= 5V
 hFE Classifications O Y GR 60-120 100-200 150-300 KTD1945 MIN TYP. MAX UNIT 60 V 0.5 V 1.0 V 100 μA 100 μA 60 300 NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products ar...

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