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KTD1414 |
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| Part Number | KTD1414 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 1A, VCE= 2V ·Minimum Lot-to... |
| Features |
specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 6mA
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE -1
DC Current Gain
IC= 1A; VCE= 2V
hFE -2
DC Current Gain
IC= 3A; VCE= 2V
KTD1414
MIN TYP. MAX UNIT
80
V
1.5
V
2.0
V
20
μA
2.5
mA
2000
1000
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notificati... |
| Document |
 KTD1414 Data Sheet
PDF 212.80KB |
| Distributor | Stock | Price | Buy |
|---|
