| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
Inchange Semiconductor |
2SC5803 IC= 8A; IB= 2A B 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 2A B 1.5 V ICES Collector Cutoff Current VCE= 1400V; VBE= 0 1.0 mA ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= |
|
|
|
|
Inchange Semiconductor Company |
Silicon NPN Power Transistor at) Collector-Emitter Saturation Voltage IC= 8A; IB= 2A VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 2A ICES Collector Cutoff Current VCE= 1400V; VBE= 0 ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff Current VEB |
|
|
|
|
Inchange Semiconductor |
Silicon NPN RF Transistor or Cutoff Current ICEO Collector Cutoff Current IEBO Emitter Cutoff Current hFE DC Current Gain fT Current-Gain—Bandwidth Product COB Output Capacitance Cre Reverse Transfer Capacitance ︱S21e︱2 Insertion Power Gain PG Power Gain NF N |
|
|
|
|
Inchange Semiconductor Company Limited |
Silicon NPN Power Transistor OL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.75A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current hFE DC Current Gain IC= |
|