2SC5885 Inchange Semiconductor Company Limited Silicon NPN Power Transistor Datasheet, en stock, prix

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2SC5885

Inchange Semiconductor Company Limited
2SC5885
2SC5885 2SC5885
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Part Number 2SC5885
Manufacturer Inchange Semiconductor Company Limited
Description ·High Breakdown Voltage ·Wide Area of Safe Operation ·Built-in Damper Diode ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Hor...
Features OL PARAMETER CONDITIONS V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.75A VBE(sat) Base-Emitter Saturation Voltage ICBO Collector Cutoff Current hFE DC Current Gain IC= 3A; IB= 0.75A VCB= 1000V; IE= 0 VCB= 1500V; IE= 0 IC= 3A; VCE= 5V VECF C-E Diode Forward Voltage IF= 3A fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V; f= 0.5MHz Switching times; Resistive load tstg Storage Time tf Fall Time IC= 3A, IB1= 0.75A; IB2= -1.5A MIN TYP. MAX UNIT 5 V 2.5 V 1.5 V 50 μA 1.0 mA 5 10 2.0 V 3 M...

Document Datasheet 2SC5885 Data Sheet
PDF 181.39KB
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