2SC5803 Inchange Semiconductor Company Silicon NPN Power Transistor Datasheet, en stock, prix

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2SC5803

Inchange Semiconductor Company
2SC5803
2SC5803 2SC5803
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Part Number 2SC5803
Manufacturer Inchange Semiconductor Company
Description ·High Breakdown Voltage- : VCBO= 1500V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operati...
Features at) Collector-Emitter Saturation Voltage IC= 8A; IB= 2A VBE(sat) Base-Emitter Saturation Voltage IC= 8A; IB= 2A ICES Collector Cutoff Current VCE= 1400V; VBE= 0 ICBO Collector Cutoff Current VCB= 800V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE-1 DC Current Gain IC= 1A; VCE= 5V hFE-2 DC Current Gain IC= 8A; VCE= 5V Switching Times tstg Storage Time tf Fall Time IC= 7A, IB1= 1.4A; IB2= -2.8A; VCC= 200V; RL= 28.6Ω MIN TYP. MAX UNIT 3.0 V 1.5 V 1.0 mA 10 μA 1.0 mA 15 40 5.5 8.5 4.0 μs 0.3 μs NOTICE: ISC reserves the rights to make changes of the con...

Document Datasheet 2SC5803 Data Sheet
PDF 178.47KB
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