No. | Partie # | Fabricant | Description | Fiche Technique |
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Inchange Semiconductor |
Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown |
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Inchange Semiconductor |
Silicon PNP Power Transistor L CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage I |
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Inchange Semiconductor |
Silicon NPN Power Transistor /951F/953F/955F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD949F VCEO(SUS) Collector-Emitter Sustaining Voltage BD951F BD953F IC= 30mA ; IB= 0 BD955F VCE(sat) VBE(on) ICBO ICEO Collector-Emit |
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Inchange Semiconductor |
Silicon NPN Power Transistors CS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= |
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Inchange Semiconductor |
Silicon NPN Power Transistors ified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= -50mA ;IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= -5A; IB= -0.5A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= -10A; IB= -2.5A VBE(sat) B |
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Inchange Semiconductor |
Silicon NPN Power Transistor tion to Ambient MAX 4.17 70 UNIT ℃/W ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD933/935/937/939/941 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER |
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Inchange Semiconductor |
Silicon NPN Power Transistor tion to Ambient MAX 4.17 70 UNIT ℃/W ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD933/935/937/939/941 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER |
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Inchange Semiconductor |
Silicon NPN Power Transistor egistered trademark isc Silicon NPN Power Transistor BD943/945/947 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BD943 BD945 BD947 IC= 30mA ; IB= 0 V |
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Inchange Semiconductor |
Silicon NPN Power Transistor egistered trademark isc Silicon NPN Power Transistor BD943/945/947 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BD943 BD945 BD947 IC= 30mA ; IB= 0 V |
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Inchange Semiconductor |
Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown |
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Inchange Semiconductor |
Silicon NPN Power Transistor /951F/953F/955F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD949F VCEO(SUS) Collector-Emitter Sustaining Voltage BD951F BD953F IC= 30mA ; IB= 0 BD955F VCE(sat) VBE(on) ICBO ICEO Collector-Emit |
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Inchange Semiconductor |
Silicon NPN Power Transistor /951F/953F/955F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD949F VCEO(SUS) Collector-Emitter Sustaining Voltage BD951F BD953F IC= 30mA ; IB= 0 BD955F VCE(sat) VBE(on) ICBO ICEO Collector-Emit |
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Inchange Semiconductor |
Silicon NPN Power Transistor /951F/953F/955F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD949F VCEO(SUS) Collector-Emitter Sustaining Voltage BD951F BD953F IC= 30mA ; IB= 0 BD955F VCE(sat) VBE(on) ICBO ICEO Collector-Emit |
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Inchange Semiconductor |
Silicon PNP Power Transistor L CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= -1mA ; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage I |
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Inchange Semiconductor |
Silicon PNP Power Transistor stor BD950F/952F/954F/956F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD950F VCEO(SUS) Collector-Emitter Sustaining Voltage BD952F BD954F IC= -30mA ; IB= 0 BD956F VCE(sat) Collector-Emitter Sa |
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Inchange Semiconductor |
Silicon PNP Power Transistor stor BD950F/952F/954F/956F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD950F VCEO(SUS) Collector-Emitter Sustaining Voltage BD952F BD954F IC= -30mA ; IB= 0 BD956F VCE(sat) Collector-Emitter Sa |
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Inchange Semiconductor |
Silicon PNP Power Transistor stor BD950F/952F/954F/956F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD950F VCEO(SUS) Collector-Emitter Sustaining Voltage BD952F BD954F IC= -30mA ; IB= 0 BD956F VCE(sat) Collector-Emitter Sa |
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Inchange Semiconductor |
Silicon PNP Power Transistor stor BD950F/952F/954F/956F ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BD950F VCEO(SUS) Collector-Emitter Sustaining Voltage BD952F BD954F IC= -30mA ; IB= 0 BD956F VCE(sat) Collector-Emitter Sa |
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Inchange Semiconductor |
Silicon NPN Power Transistor tion to Ambient MAX 4.17 70 UNIT ℃/W ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD933/935/937/939/941 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER |
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Inchange Semiconductor |
Silicon NPN Power Transistor tion to Ambient MAX 4.17 70 UNIT ℃/W ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD933/935/937/939/941 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER |
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