BD949F |
Part Number | BD949F |
Manufacturer | Inchange Semiconductor |
Description | ·DC Current Gain- : hFE= 40(Min)@ IC= 500mA ·Complement to Type BD950F/952F/954F/956F ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for po... |
Features |
/951F/953F/955F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BD949F
VCEO(SUS)
Collector-Emitter Sustaining Voltage
BD951F BD953F
IC= 30mA ; IB= 0
BD955F
VCE(sat) VBE(on)
ICBO ICEO
Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A
Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current
IC= 2A; VCE= 4V
VCB= VCBOmax; IE= 0 VCB= 1/2VCBOmax; IE= 0,TJ=150℃
VCE= VCEOmax; IB= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 500mA ; VCE= 4V
hFE-2
DC Current Gain
IC= 2A ; VCE= 4V
fT
Current-G... |
Document |
BD949F Data Sheet
PDF 213.70KB |
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