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BD950 |
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| Part Number | BD950 |
| Manufacturer | Inchange Semiconductor |
| Description | ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= -60V(Min) ·DC Current Gain- : hFE= 40(Min)@ IC= -500mA ·Complement to Type BD949 ·Minimum Lot-to-Lot variations for robust device performance and reli... |
| Features |
L CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -1mA ; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= -1mA ; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -1mA ; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= -2A; IB= -0.2A
VBE(on) Base-Emitter On Voltage
IC= -2A; VCE= -4V
ICBO
Collector Cutoff Current
ICEO
Collector Cutoff Current
VCB= -60V; IE= 0
VCB= -30V; IE= 0,TJ=150℃ VCE= -30V; IB= 0
IEBO
Emitter Cutoff Current
VEB= -5V; IC= 0
hFE-1
DC Current Gain
IC= -500mA ; VCE= -4... |
| Document |
 BD950 Data Sheet
PDF 213.08KB |
| Distributor | Stock | Price | Buy |
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