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Inchange Semiconductor |
P-Channel MOSFET Transistor L CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= -1mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= -1mA RDS(ON) Drain-Source On-stage Resistance VGS= -10V; ID= -15A IGSS Gate Source Le |
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Inchange Semiconductor |
P-Channel MOSFET Transistor NDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= -1mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= -1mA RDS(ON) Drain-Source On-stage Resistance VGS= -10V; ID= -10A IGSS Gate Source Leakage Current VGS= -12V;VDS= 0 IDSS Zero Gate |
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Inchange Semiconductor |
P-Channel MOSFET Transistor ID= -1mA RDS(ON) Drain-Source On-stage Resistance VGS= -10V; ID= -10A IGSS Gate Source Leakage Current VGS= -16V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= -80V,VGS= 0 VSD Diode Forward Voltage IF=-20 A;VGS= 0 2SJ221 MIN MAX UNIT |
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Inchange Semiconductor |
P-Channel MOSFET Transistor ONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= -1mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= -1mA RDS(ON) Drain-Source On-stage Resistance VGS= -10V; ID= -8A IGSS Gate Source Leakage Current VGS= -12V;VDS= 0 IDSS Zero Gate |
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Inchange Semiconductor |
P-Channel MOSFET Transistor LECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= -10mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= -1mA RDS(ON) Drain-Source On-stage Resistance VGS= -10V; ID= -3A IGSS Gate |
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Inchange Semiconductor |
P-Channel MOSFET Transistor CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= -10mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= -1mA RDS(ON) Drain-Source On-stage Resistance VGS= -10V; ID= -5A IGSS Gate Source Leakage Current VGS= -20V;VDS= 0 IDSS Zero Ga |
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Inchange Semiconductor |
P-Channel MOSFET Transistor CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= -10mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= -1mA RDS(ON)-1 Drain-Source On-stage Resistance VGS= -10V; ID= -6A RDS(ON)-2 Drain-Source On-stage Resistance VGS= -4V; ID= -6A |
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Inchange Semiconductor |
P-Channel MOSFET Transistor CTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= -10mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= -1mA RDS(ON) Drain-Source On-stage Resistance VGS= -10V; ID= -6.5A IGSS Gate |
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Inchange Semiconductor |
P-Channel MOSFET Transistor LECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= -10mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= -1mA RDS(ON) Drain-Source On-stage Resistance VGS= -10V; ID= -6.5A IGSS Gat |
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Inchange Semiconductor |
P-Channel MOSFET Transistor NDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= -1mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= -1mA RDS(ON) Drain-Source On-stage Resistance VGS= -10V; ID= -7.5A IGSS Gate Source Leakage Current VGS= -12V;VDS= 0 IDSS Zero Gat |
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