2SJ374 Inchange Semiconductor P-Channel MOSFET Transistor Datasheet, en stock, prix

logo
Recherchez avec le numéro de pièce ainsi que le fabricant ou la description

2SJ374

Inchange Semiconductor
2SJ374
2SJ374 2SJ374
zoom Click to view a larger image
Part Number 2SJ374
Manufacturer Inchange Semiconductor
Description ·Low Drain-Source ON Resistance ·High Forward Transfer Admittance ·Low Leakage Current ·Enhancement-Mode ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIO...
Features NDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= -1mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= -1mA RDS(ON) Drain-Source On-stage Resistance VGS= -10V; ID= -7.5A IGSS Gate Source Leakage Current VGS= -12V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= -60V,VGS= 0 VSD Diode Forward Voltage IF=-20A;VGS= 0 2SJ374 MIN MAX UNIT -60 V -1.0 -2 V 0.07 Ω -10 uA -0.1 mA -1.5 V Notice: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for ...

Document Datasheet 2SJ374 Data Sheet
PDF 194.67KB
Distributor Stock Price Buy

Similar Datasheet

No. Parte # Fabricante Descripción Hoja de Datos
1 2SJ370
Shindengen
POWER MOSFET Datasheet
2 2SJ372
Shindengen Electric
60V SERIES POWER MOSFET Datasheet
3 2SJ372
Shindengen
POWER MOSFET Datasheet
4 2SJ376
Inchange Semiconductor
P-Channel MOSFET Transistor Datasheet
5 2SJ377
Toshiba Semiconductor
P-Channel MOSFET Datasheet
More datasheet from Inchange Semiconductor



Depuis 2018 :: D4U Semiconductor :: (Politique de confidentialité et contact