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Inchange Semiconductor |
N-Channel MOSFET ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V (Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·Minimum Lot-to-Lot variations for robust device |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V (Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.85Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·Designed for high efficiency swit |
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Inchange Semiconductor |
Silicon NPN Power Transistor |
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Inchange Semiconductor |
Silicon PNP Power Transistor sc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2N6213 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; I |
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Inchange Semiconductor |
N-Channel Mosfet Transistor ·Drain Current –ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.5Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·DESCRITION ·High efficiency switch mode power su |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ·Drain Current ID= 2A@ TC=25℃ ·Drain Source Voltage- : VDSS= 650V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 5.0Ω(Max) ·Fast Switching ·APPLICATIONS ·Switching power supplies,converters,AC and DC motor controls ·ABSOLUTE MAXIMUM RATINGS(Ta= |
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Inchange Semiconductor |
Silicon PNP Power Transistor |
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Inchange Semiconductor |
Silicon PNP Power Transistors P Power Transistors Product Specification 2N6489 2N6490 2N6491 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage 2N6489 2N6490 IC=-0.2A ;IB=0 2N6491 VCEsat-1 Collector |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ication 2N6770 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 7. |
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Inchange Semiconductor |
Silicon PNP Power Transistors P Power Transistors Product Specification 2N6489 2N6490 2N6491 CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage 2N6489 2N6490 IC=-0.2A ;IB=0 2N6491 VCEsat-1 Collector |
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Inchange Semiconductor |
Silicon PNP Power Transistor |
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Inchange Semiconductor |
Silicon NPN Power Transistor ess otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 1.0A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 2.0A |
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Inchange Semiconductor |
Silicon NPN Power Transistor sistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ;IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 7A; IB= 3A VBE(on) Base-Emitter On |
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Inchange Semiconductor |
N-Channel MOSFET Transistor ineprint.cn INCHANGE Semiconductor isc P-Channel Mosfet Transistor isc Product Specification 2N6898 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= -1mA VGS(TH) Gate Thresho |
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Inchange Semiconductor |
N-Channel MOSFET Transistor 2N6765 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 16A IGSS |
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Inchange Semiconductor |
N-Channel MOSFET Transistor 2N6761 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 2.5A IGSS |
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Inchange Semiconductor |
N-Channel MOSFET Transistor N6756 ·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= 1mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= 1mA RDS(ON) Drain-Source On-stage Resistance VGS= 10V; ID= 9A IGSS Ga |
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Inchange Semiconductor |
Silicon NPN Power Transistor ess otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 5A; IB= 1.0A VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 2.0A |
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Inchange Semiconductor |
Silicon PNP Power Transistor |
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Inchange Semiconductor |
Silicon PNP Power Transistors |
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