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2N6213 |
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| Part Number | 2N6213 |
| Manufacturer | Inchange Semiconductor |
| Description | ·High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= -350V(Min) ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed f... |
| Features |
sc & iscsemi is registered trademark
isc Silicon PNP Power Transistor
2N6213
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0
-350
V
V(BR)EBO Emitter-Base Breakdown Vltage
IE= -1mA ; IC= 0
-6
V
VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -125mA
-2.0
V
VBE(sat) Base-Emitter Saturation Voltage
IC= -1A; IB= -125mA
-1.4
V
ICEV
Collector Cutoff Current
VCE= -360V; VBE(off)= -1.5V
-0.5 mA
ICEO
Collector Cutoff Current
VCE= -150V; IB= 0
-... |
| Document |
 2N6213 Data Sheet
PDF 189.39KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | 2N6211 |
Central Semiconductor |
SILICON PNP POWER TRANSISTORS |
|
| 2 | 2N6211 |
Inchange Semiconductor |
Silicon PNP Power Transistors |
|
| 3 | 2N6211 |
Microsemi |
PNP HIGH POWER SILICON TRANSISTOR |
|
| 4 | 2N6212 |
Central Semiconductor |
SILICON PNP POWER TRANSISTORS |
|
| 5 | 2N6212 |
RCA |
Power Transistors |
|