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12N60 |
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| Part Number | 12N60 |
| Manufacturer | Inchange Semiconductor |
| Description | isc N-Channel Mosfet Transistor 12N60 ·FEATURES ·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V (Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) ·Avalanche Energy S... |
| Features |
·Drain Current –ID= 12A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V (Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.7Ω(Max) ·Avalanche Energy Specified ·Fast Switching ·Simple Drive Requirements ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Designed for high efficiency switch mode power supply. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 12 A IDM Drain Current-Single Plused 48 A Tj Max. Operating... |
| Document |
 12N60 Data Sheet
PDF 223.05KB |
| Distributor | Stock | Price | Buy |
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