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IXYS R26 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
R2619ZC25K

IXYS
Distributed Gate Thyristor
Datasheet
2
R2620ZC22K

IXYS
Distributed Gate Thyristor
Datasheet
3
R2619ZC24L

IXYS
Distributed Gate Thyristor
Datasheet
4
R2619ZC25J

IXYS
Distributed Gate Thyristor
Datasheet
5
R2619ZC24K

IXYS
Distributed Gate Thyristor
Datasheet
6
R2619ZC20K

IXYS
Distributed Gate Thyristor
Datasheet
7
R2619ZC18L

IXYS
Distributed Gate Thyristor
Datasheet
8
R2619ZC18K

IXYS
Distributed Gate Thyristor
Datasheet
9
R2620ZC23L

IXYS
Distributed Gate Thyristor
Datasheet
10
IXFR24N50

IXYS Corporation
(IXFR24N50 / IXFR26N50) HiPerFET Power MOSFETs
W °C °C °C °C V~ g
• Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
• Low drain to tab capacitance(<50pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell st
Datasheet
11
IXFR26N50

IXYS Corporation
(IXFR24N50 / IXFR26N50) HiPerFET Power MOSFETs
W °C °C °C °C V~ g
• Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
• Low drain to tab capacitance(<50pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell st
Datasheet
12
IXFR24N50Q

IXYS Corporation
(IXFR24N50Q / IXFR26N50Q) HiPerFET Power MOSFETs
l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<35pF) l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped
Datasheet
13
IXFR26N50Q

IXYS Corporation
(IXFR24N50Q / IXFR26N50Q) HiPerFET Power MOSFETs
l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<35pF) l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped
Datasheet
14
IXFR26N60Q

IXYS Corporation
HiPerFETTM Power MOSFETs

• Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
• IXYS advanced low Qg process
• Low gate charge and capacitances - easier to drive - faster switching
• Low drain to tab
Datasheet
15
R2619ZC24J

IXYS
Distributed Gate Thyristor
Datasheet
16
R2619ZC22J

IXYS
Distributed Gate Thyristor
Datasheet
17
R2619ZC21J

IXYS
Distributed Gate Thyristor
Datasheet
18
R2619ZC20L

IXYS
Distributed Gate Thyristor
Datasheet
19
R2619ZC20J

IXYS
Distributed Gate Thyristor
Datasheet
20
R2619ZC18J

IXYS
Distributed Gate Thyristor
Datasheet



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