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IXFR26N50 |
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| Part Number | IXFR26N50 |
| Manufacturer | IXYS Corporation |
| Description | Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM IXFR 24N50 (Electrically Isolated Back Surface) N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family www.Data... |
| Features |
W °C °C °C °C V~ g • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(<50pF) • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Fast intrinsic Rectifier Applications • DC-DC converters • Battery chargers • Switched-mode and resonant-mode power supplies • DC choppers • AC motor control Advantages • Easy assembly • Space savings • High power density 1.6 mm (0.062 in.) from case for 10 s 50/60 Hz, RMS t = 1 minute leads-to... |
| Document |
 IXFR26N50 Data Sheet
PDF 66.84KB |
| Distributor | Stock | Price | Buy |
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| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | IXFR26N50Q |
IXYS Corporation |
(IXFR24N50Q / IXFR26N50Q) HiPerFET Power MOSFETs |
|
| 2 | IXFR26N60Q |
IXYS Corporation |
HiPerFETTM Power MOSFETs |
|
| 3 | IXFR200N10P |
IXYS Corporation |
PolarTM HiPerFET Power MOSFET |
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| 4 | IXFR20N100P |
IXYS Corporation |
Polar Power MOSFET HiPerFET |
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| 5 | IXFR20N120P |
IXYS Corporation |
Polar Power MOSFET HiPerFET |
|