IXFR26N50Q |
Part Number | IXFR26N50Q |
Manufacturer | IXYS Corporation |
Description | HiPerFETTM Power MOSFETs IXFR 26N50Q ISOPLUS247TM IXFR 24N50Q (Electrically Isolated Back Surface) N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family VDSS ID25 RDS(on) 0.20 Ω 0.23 Ω 50... |
Features |
l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<35pF) l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped Inductive Switching (UIS) rated l Fast intrinsic Rectifier Applications l DC-DC converters l Battery chargers l Switched-mode and resonant-mode power supplies l DC choppers l AC motor control Advantages l Easy assembly: no screws, or isolation foils required l Space savings l High power density l Low collector capacitance to ground (low EMI)
Symb... |
Document |
IXFR26N50Q Data Sheet
PDF 111.40KB |
Distributor | Stock | Price | Buy |
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No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | IXFR26N50 |
IXYS Corporation |
(IXFR24N50 / IXFR26N50) HiPerFET Power MOSFETs | |
2 | IXFR26N60Q |
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HiPerFETTM Power MOSFETs | |
3 | IXFR200N10P |
IXYS Corporation |
PolarTM HiPerFET Power MOSFET | |
4 | IXFR20N100P |
IXYS Corporation |
Polar Power MOSFET HiPerFET | |
5 | IXFR20N120P |
IXYS Corporation |
Polar Power MOSFET HiPerFET |