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IXYS R24 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
R2475ZC20N

IXYS
Distributed Gate Thyristor
Datasheet
2
R2475ZC26N

IXYS
Distributed Gate Thyristor
Datasheet
3
IXFR24N100

IXYS Corporation
HiPerFETTM Power MOSFETs

• Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
• Low drain to tab capacitance(<30pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell structure
• Unclamped
Datasheet
4
IXFR24N50

IXYS Corporation
(IXFR24N50 / IXFR26N50) HiPerFET Power MOSFETs
W °C °C °C °C V~ g
• Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
• Low drain to tab capacitance(<50pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell st
Datasheet
5
IXFR26N50

IXYS Corporation
(IXFR24N50 / IXFR26N50) HiPerFET Power MOSFETs
W °C °C °C °C V~ g
• Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation
• Low drain to tab capacitance(<50pF)
• Low RDS (on) HDMOSTM process
• Rugged polysilicon gate cell st
Datasheet
6
IXFR24N50Q

IXYS Corporation
(IXFR24N50Q / IXFR26N50Q) HiPerFET Power MOSFETs
l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<35pF) l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped
Datasheet
7
IXFR26N50Q

IXYS Corporation
(IXFR24N50Q / IXFR26N50Q) HiPerFET Power MOSFETs
l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<35pF) l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Unclamped
Datasheet
8
R2475ZC28N

IXYS
Distributed Gate Thyristor
Datasheet
9
R2475ZC24N

IXYS
Distributed Gate Thyristor
Datasheet
10
R2475ZC22N

IXYS
Distributed Gate Thyristor
Datasheet
11
IXGR24N60C

IXYS Corporation
HiPerFASTTM IGBT ISOPLUS247TM
l l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s VISOL Weight 50/60 Hz, RMS, t = 1minute leads-to-tab DCB Isolated mounting tab Meets TO-247AD package Outline High current handling capability Latest generation
Datasheet



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