IXYS IRF fiche technique

No.	Partie #	Fabricant	Description
1	IRFP254	IXYS	Standard Power MOSFET l Mounting torque 1.13/10 Nm/lb.in. 6 300 g °C l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s International standard package JEDEC TO-247 AD Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure
2	IRFP260	IXYS Corporation	Standard Power MOSFET • International standard package JEDEC TO-247 AD • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • High commutating dv/dt rating • Fast switching times Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 1
3	IRFP250	IXYS	Power MOSFET l International standard package JEDEC TO-247 AD l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l High commutating dv/dt rating l Fast switching times Symbol VDSS V GS(th) IGSS IDSS R DS(on) Test Conditions Characteristic
4	IRFP150	IXYS Corporation	(IRFP150 - IRFP153) HIGH VOLTAGE POWER MOSFET DIE
5	IRFP450	IXYS	Standard Power MOSFET l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Low package inductance (< 5 nH) - easy to drive and to protect l Fast switching times Symbol VDSS V GS(th) IGSS IDSS R DS(on) Test Condition
6	IRFP151	IXYS Corporation	(IRFP150 - IRFP153) HIGH VOLTAGE POWER MOSFET DIE
7	IRFP152	IXYS Corporation	(IRFP150 - IRFP153) HIGH VOLTAGE POWER MOSFET DIE
8	IRFP153	IXYS Corporation	(IRFP150 - IRFP153) HIGH VOLTAGE POWER MOSFET DIE
9	IRFP264	IXYS Corporation	Standard Power MOSFET l Mounting torque 1.13/10 Nm/lb.in. 6 300 g °C l l l l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s International standard package JEDEC TO-247 AD Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure
10	IRFP360	IXYS	N-Channel MOSFET • Fast switching times • International standard packages • Low R HDMOSTM process DS (on) • Rugged polysilicon gate cell structure • High commuting dv/dt rating Applications • DC choppers • Motor Controls • Switch-mode and resonant-mode • Unint
11	IRF150	IXYS Corporation	(IRF150 - IRF153) HIGH VOLTAGE POWER MOSFET DIE
12	IRFP470	IXYS	N-Channel MOSFET l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l High commutating dv/dt rating l Fast switching times Symbol VDSS V GS(th) IGSS IDSS R DS(on) Test Conditions Characteristic Values (TJ = 25
13	IRF153	IXYS Corporation	(IRF150 - IRF153) HIGH VOLTAGE POWER MOSFET DIE
14	IRF151	IXYS Corporation	(IRF150 - IRF153) HIGH VOLTAGE POWER MOSFET DIE
15	IRF152	IXYS Corporation	(IRF150 - IRF153) HIGH VOLTAGE POWER MOSFET DIE
16	IRFC150	IXYS Corporation	High Voltage Power MOSFET
17	IRFC350	IXYS Corporation	N-Channel MOSFET
18	IRFC450	IXYS Corporation	HIGH VOLTAGE POWER MOSFET
19	IRFC250	IXYS Corporation	High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series