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IRFP470 |
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| Part Number | IRFP470 |
| Manufacturer | IXYS |
| Description | MegaMOSTMFET N-Channel Enhancement Mode IRFP 470 VDSS = 500 V ID (cont) = 24 A RDS(on) = 0.23 Ω Symbol Test Conditions VDSS V DGR VGS VGSM ID25 IDM I AR EAR dv/dt PD T J TJM T stg Md Weight TJ =... |
| Features |
l International standard packages l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l High commutating dv/dt rating l Fast switching times
Symbol
VDSS V
GS(th)
IGSS IDSS
R DS(on)
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
VGS = 0 V, ID = 250 µA
V DS
=
V, GS
I D
=
250
µA
VGS = ±20 VDC, VDS = 0
VDS = 0.8 • VDSS V =0V GS TJ = 25°C T J = 125°C V = 10 V, I = 0.5 • I GS D D25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % 500 2 V 4V ±100 nA 25 µA 250 µA 0.23 Ω Applications l Switch-mode and resonant-mode power s... |
| Document |
 IRFP470 Data Sheet
PDF 46.09KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | IRFP470 |
INCHANGE |
N-Channel MOSFET |
|
| 2 | IRFP4710 |
International Rectifier |
ower MOSFET |
|
| 3 | IRFP4710 |
INCHANGE |
N-Channel MOSFET |
|
| 4 | IRFP4710PBF |
International Rectifier |
Power MOSFET |
|
| 5 | IRFP4768 |
INCHANGE |
N-Channel MOSFET |
|