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IXYS Corporation |
RF Power MOSFET TJ = 25°C unless otherwise specified SG1 SG2 GATE = = = = 1000 V 10 A 1.2 Ω 940 W Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, |
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IXYS Corporation |
RF Power MOSFET Test Conditions Characteristic Values TJ = 25°C unless otherwise specified min. VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight 1.6mm (0.063 in) from case for 10 s VGS = 0 V, ID = 3 ma VDS = VGS, ID = 4 ma VGS = ±20 VDC, VDS = 0 VDS = 0.8 |
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