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DE375-501N21A |
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| Part Number | DE375-501N21A |
| Manufacturer | IXYS Corporation |
| Description | DE375-501N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1... |
| Features |
Test Conditions
Characteristic Values
TJ = 25°C unless otherwise specified
min. VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight
1.6mm (0.063 in) from case for 10 s VGS = 0 V, ID = 3 ma VDS = VGS, ID = 4 ma VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS TJ = 25°C VGS = 0 TJ = 125°C VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% VDS = 15 V, ID = 0.5ID25, pulse test
typ.
max. V 5.5 ±100 50 1 0.22 V nA µA mA Ω S +175 °C °C +175 °C °C g
500 2.5
• Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power • • − − • • ... |
| Document |
 DE375-501N21A Data Sheet
PDF 172.11KB |
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