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DE375-102N10A |
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| Part Number | DE375-102N10A |
| Manufacturer | IXYS Corporation |
| Description | DE375-102N10A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PDC PDHS PDAMB RthJC RthJHS Symbol Test Conditio... |
| Features |
TJ = 25°C unless otherwise specified
SG1 SG2 GATE
= = = =
1000 V 10 A 1.2 Ω 940 W
Test Conditions
TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient Tc = 25°C Tc = 25°C, pulse width limited by TJM Tc = 25°C Tc = 25°C IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω IS = 0
RDS(on) PDC
DRAIN
SD1
SD2
max. V 5.5 ±100 V nA
VDSS VGS(th) IGSS IDSS RDS(on) gfs TJ TJM Tstg TL Weight
VGS = 0 V, ID = 3 ma VDS = VGS, ID = 4 ma VGS = ±20 VDC, VDS = 0 VDS = 0.8 VDSS TJ = 25°C VGS = 0 TJ = 125°C VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% VDS =... |
| Document |
 DE375-102N10A Data Sheet
PDF 157.49KB |
| Distributor | Stock | Price | Buy |
|---|
| No. | Parte # | Fabricante | Descripción | Hoja de Datos |
|---|---|---|---|---|
| 1 | DE375-501N21A |
IXYS Corporation |
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