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IXYS Corporation |
PolarHV HiPerFET Power MOSFET D = Drain Tab = Drain Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ± 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125° C Characteristic Values Min. T |
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IXYS Corporation |
IGBT l International standard packages l 2nd generation HDMOSTM process l Low V CE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity l Voltage rating guaranteed at high temperature (125°C) |
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IXYS Corporation |
HiPerFET Power MOSFETs • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic rectifier Symbol Test Con |
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IXYS Corporation |
(IXGH20N120 / IXGT20N120) IGBT V V V V A A A A G E G DS TO-247 (IXGH) TO-268 (IXGT) DataShee C (TAB) DataSheet4U.com -55 ... +150 150 -55 ... +150 300 260 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum tab temperature for soldering Md We |
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IXYS Corporation |
IGBT · International standard packages JEDEC TO-263 surface mountable and JEDEC TO-220 AB · High frequency IGBT · High current handling capability · HiPerFASTTM HDMOSTM process · MOS Gate turn-on - drive simplicity Applications Symbol Test Conditions Char |
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IXYS Corporation |
HiPerFET Power MOSFETs • International standard package • miniBLOC, with Aluminium nitride isolation 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 2500 3000 • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated |
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IXYS Corporation |
GigaMOS TrenchT2 HiperFET Power MOSFET z z z z 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247) 300 260 1.13/10 20..120 /4.5..27 10 6 High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(o |
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IXYS Corporation |
HiPerFETTM Power MOSFETs Q-Class Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.5 4.5 ±200 TJ = 25°C TJ = 125°C 25 1 0.42 V V nA mA mA W • IXYS advanced low Qg process • International standard packages • Epoxy meet UL 94 V-0 |
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IXYS Corporation |
Trench Power MOSFET ISOPLUS220 l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Trench MOSFET - very low RDS(on) - fast switching - usable intrinsic reverse diode l Low drain to tab capacitance(<15pF |
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IXYS Corporation |
IGBT V V V V A A A A G E C (TAB) G CE TO-220AB (IXGP) TO-263 AA (IXGA) Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque with screw M3 Mounting torque with screw M3.5 TO-220 TO-263 0.45/4 Nm/lb.in. |
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IXYS Corporation |
(IXFHxxxx) HiPerRF Power MOSFETs F-Class: MegaHertz Switching |
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IXYS Corporation |
(IXGX120N60B / IXGK120N60B) HiPerFAST IGBT G = Gate C = Collector C E (TAB) DataSheet4U.com -55 ... +150 150 -55 ... +150 300 0.4/6 E = Emitter hee TAB = Collector DataS 1.6 mm (0.063 in.) from case for 10 s Mounting torque TO-264 PLUS 247 TO-264 • International standard packages • Ve |
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IXYS Corporation |
IGBT l International standard packages l 2nd generation HDMOSTM process l Low V CE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity l Voltage rating guaranteed at high temperature (125°C) |
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IXYS Corporation |
IGBT • International standard packages JEDEC TO-268 surface mountable and JEDEC TO-247 AD • High current handling capability • Latest generation HDMOSTM process • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and rob |
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IXYS Corporation |
(IXGH20N60B / IXGT20N60B) HiPerFAST IGBT • International standard packages JEDEC TO-268 surface mountable and JEDEC TO-247 AD • High current handling capability • Latest generation HDMOSTM process • MOS Gate turn-on - drive simplicity Applications • AC motor speed control • DC servo and rob |
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IXYS Corporation |
(IXGH20N60BD1 / IXGT20N60BD1) HiPerFAST IGBT with Diode DataShee Mounting torque (M3) TO-247AD 1.13/10 Nm/lb.in. 300 6 4 Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247AD TO-268 • International standard packages • High frequency IGBT and antiparallel FRED in |
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IXYS Corporation |
Polar MOSFETs z z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 175°C Characteristic Values Min. Typ. Max. 300 3.0 5.0 |
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IXYS Corporation |
Polar Power MOSFET HiPerFET • Silicon chip on Direct-Copper-Bond Maximum lead temperature for soldering Plastic body for 10s 50/60 Hz, RMS, 1 minute Mounting force 300 260 2500 20..120/4.5..27 5 • • • • Weight substrate - High power dissipation - Isolated mounting surface |
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IXYS Corporation |
PolarHV HiPerFET Power MOSFET z Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation z Low drain to tab capacitance(<30pF) Applications z DC-DC converters z z z z Symbol Test Conditions (TJ = 25°C, unless |
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IXYS Corporation |
GenX3 1200V IGBT z Maximum Lead Temperature for Soldering 1.6mm (0.062 in.) from Case for 10s TO-263 TO-220 z z Optimized for Low Conduction and Switching Losses Square RBSOA International Standard Packages Advantages z z High Power Density Low Gate Drive Requir |
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