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IXFT120N15P |
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| Part Number | IXFT120N15P |
| Manufacturer | IXYS Corporation |
| Description | Advanced Technical Information PolarTM HiPerFET Power MOSFET N-Channel Enhancement Mode Fast recovery intrinsic diode IXFH 120N15P IXFT 120N15P VDSS = 150 V ID25 = 120 A RDS(on) ≤ 17 mΩ ≤ 200 ns tr... |
| Features |
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Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4mA VGS = ±30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 175°C
Characteristic Values Min. Typ. Max. 300 3.0 5.0 ±100 25 1000 17 V V nA µA µA mΩ
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International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic diode
Advantages
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Easy to mount Space savings High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
PolarHTTM DMOS transistors u... |
| Document |
 IXFT120N15P Data Sheet
PDF 612.50KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
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