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IXFN20N120 |
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| Part Number | IXFN20N120 |
| Manufacturer | IXYS Corporation |
| Description | Advanced Technical Information HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFN 20N120 VDSS ID25 D = 1200 V = 20 A RDS(on) = 0.75 Ω ≤ 300 ns trr G S ... |
| Features |
• International standard package • miniBLOC, with Aluminium nitride isolation 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 2500 3000 • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated Md Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g Weight • Low package inductance • Fast intrinsic Rectifier Applications • DC-DC converters Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1200 2.5 4.5 ± 100 TJ = 25°C TJ = 125°C 100 2 0.75 V V nA µA mA Ω... |
| Document |
 IXFN20N120 Data Sheet
PDF 587.98KB |
| Distributor | Stock | Price | Buy |
|---|
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|---|---|---|---|---|
| 1 | IXFN20N120P |
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