IXYS 30N fiche technique

No.	Partie #	Fabricant	Description
1	30N60	IXYS	High speed IGBT l International standard packages l 2nd generation HDMOSTM process l Low V CE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity l Voltage rating guaranteed at high temperature (125°C)
2	30N50Q	IXYS	Power MOSFETs • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(<50pF) • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped
3	IXXH30N65B4	IXYS	650V IGBTs z Optimized for 5-30kHz Switching z Square RBSOA z Short Circuit Capability z International Standard Package Advantages z High Power Density z Extremely Rugged z Low Gate Drive Requirement Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specif
4	30N60A	IXYS	High speed IGBT l International standard packages l 2nd generation HDMOSTM process l Low V CE(sat) - for low on-state conduction losses l High current handling capability l MOS Gate turn-on - drive simplicity l Voltage rating guaranteed at high temperature (125°C)
5	IXST30N60C	IXYS Corporation	High Speed IGBT l l Mounting torque (TO-247) TO-247 TO-268 1.13/10 Nm/lb.in. 6 4 300 g g °C l l International standard packages Short Circuit SOA capability High frequency IGBT New generation HDMOSTM process Maximum lead temperature for soldering 1.6 mm (0.062
6	IXSM30N60	IXYS Corporation	Low VCE(sat) IGBT l l Mounting torque 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 g 300 °C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s l l l Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) m
7	IXFA130N10T2	IXYS Corporation	Power MOSFET  International Standard Packages  175°C Operating Temperature  High Current Handling Capability  Fast Intrinsic Rectifier  Dynamic dV/dt Rated  Low R DS(on) Advantages  Easy to Mount  Space Savings  High Power Density Applications  DC-DC Co
8	30N50	IXYS	N-Channel MOSFET • International standard packages • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Low package inductance - easy to drive and to protect • Fast intrinsic Diode Applications • DC-DC
9	IXXH30N60C3D1	IXYS	600V IGBTs  Optimized for 20-60kHz Switching  Square RBSOA  Anti-Parallel Ultra Fast Diode  Avalanche Capability  Short Circuit Capability  International Standard Package Advantages  High Power Density  175°C Rated  Extremely Rugged  Low Gate Drive Re
10	30N60C3	IXYS	IGBT
11	IXGH30N60BD1	IXYS Corporation	HiPerFASTTM IGBT with Diode C = Collector, TAB = Collector Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque, TO-247 AD • International standard package • Moderate frequency IGBT and antiparallel FRED in one packag
12	IXGT30N60BD1	IXYS Corporation	HiPerFASTTM IGBT with Diode C = Collector, TAB = Collector Maximum Lead and Tab temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque, TO-247 AD • International standard package • Moderate frequency IGBT and antiparallel FRED in one packag
13	IXTR30N25	IXYS	Power MOSFET l Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation l Low drain to tab capacitance(<30pF) l Low RDS (on) HDMOSTM process l Rugged polysilicon gate cell structure l Rated for
14	IXST30N60CD1	IXYS Corporation	Short Circuit SOA Capability • International standard packages: JEDEC TO-247, TO-264& TO-268 • Short Circuit SOA capability • High freqeuncy IGBT and antiparallel FRED in one package • New generation HDMOSTM process Applications Mounting torque 1.13/10 Nm/lb.in. 6 300 g °C Ma
15	IXFA230N075T2	IXYS Corporation	Power MOSFET z z 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-220) TO-263 TO-220 300 260 1.13 / 10 2.5 3.0 International Standard Packages 175°C Operating Temperature z High Current Handling Capability z Avalanche Rated z
16	IXFH230N075T2	IXYS Corporation	TrenchT2 HiperFET Power MOSFET z z International Standard Package 175°C Operating Temperature z High Current Handling Capability z Avalanche Rated z Fast Intrinsic Rectifier z Low RDS(on) Advantages z z z 1.6mm (0.062in.) from Case for 10s Plastic Body for 10 seconds 300 260 6
17	IXFT30N85XHV	IXYS	Power MOSFET  International Standard Packages  High Voltage Package  Low RDS(ON) and QG  Avalanche Rated  Low Package Inductance Advantages  High Power Density  Easy to Mount  Space Savings Applications  Switch-Mode and Resonant-Mode Power Supplies  DC-
18	CPC1130N	IXYS	4-Pin SOP OptoMOS Relay • 1500Vrms Input/Output Isolation • Low Drive Power Requirements • High Reliability • Arc-Free With No Snubbing Circuits • No EMI/RFI Generation • Small 4-Pin SOP Package • Tape & Reel Version Available • Flammability Rating UL 94 V-0 Applications •
19	IXSH30N60B	IXYS Corporation	High Speed IGBT l l Mounting torque (TO-247) TO-247 TO-268 1.13/10 Nm/lb.in. 6 4 300 g g °C l l International standard packages Short Circuit SOA capability High frequency IGBT New generation HDMOSTM process Maximum lead temperature for soldering 1.6 mm (0.062
20	IXST30N60B	IXYS Corporation	High Speed IGBT l l Mounting torque (TO-247) TO-247 TO-268 1.13/10 Nm/lb.in. 6 4 300 g g °C l l International standard packages Short Circuit SOA capability High frequency IGBT New generation HDMOSTM process Maximum lead temperature for soldering 1.6 mm (0.062