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30N50Q |
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| Part Number | 30N50Q |
| Manufacturer | IXYS |
| Description | HiPerFETTM Power MOSFETs ISOPLUS247TM IXFR 30N50Q (Electrically Isolated Back Surface) IXFR 32N50Q N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family VDSS ID25 500 V 29 A 500 V 30 ... |
| Features |
• Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low drain to tab capacitance(<50pF) • Low RDS (on) HDMOSTM process • Rugged polysilicon gate cell structure • Unclamped Inductive Switching (UIS) rated • Fast intrinsic Rectifier Symbol Test Conditions VDSS V GS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1mA V = V , I = 4mA DS GS D VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT Notes 1, 2 Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 V 2 4V ±100 nA TJ = 25°C TJ... |
| Document |
 30N50Q Data Sheet
PDF 91.75KB |
| Distributor | Stock | Price | Buy |
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